Details

Autor(en) / Beteiligte

• Kim, Soo Hyun
• Baek, In-Hwan
• Kim, Da Hye
• Pyeon, Jung Joon
• Chung, Taek-Mo
• Baek, Seung-Hyub
• Kim, Jin-Sang
• Han, Jeong Hwan
• Kim, Seong Keun

Titel

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Ist Teil von

• Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (12), p.3139-3145

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD). The performance of the SnO TFTs relies on hole carriers and defects in SnO and near the back-channel surface of SnO as well as the quality of the gate dielectric/SnO interface. The growth of SnO films at a high temperature of 210 °C effectively suppresses the hole carrier concentration, leading to a high on-current/off-current ( I on / I off ) ratio. In addition, the SnO films grown at 210 °C achieve high field effect mobility ( μ FE ) compared with the SnO films grown at lower temperatures because of their large grain size and lower impurity contents. However, the SnO films grown at 210 °C still contain defects and hole carriers, especially near the back-channel surface. The post-deposition process – back-channel surface passivation with ALD-grown Al 2 O 3 followed by post-deposition annealing at 250 °C – considerably alleviates the defects and hole carriers, resulting in superior TFT performance ( I on / I off : 2 × 10 6 , subthreshold swing: 1.8 V dec −1 , μ FE : ∼1 cm 2 V −1 s −1 ). We expect that the SnO ALD and subsequent process will provide a new opportunity for producing high-performance p-type oxide TFTs.