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Black phosphorus carbide (b‐PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p‐type mobility (≈105 cm2 V−1 s−1) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high‐performance composite few‐layer b‐PC field‐effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm2 V−1 s−1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.
High‐performance black phosphorus carbide field‐effect transistors (p‐FETs) are realized via carbon doping. The device achieves a high hole mobility of 1995 cm2 V−1 s−1 at 300 K and, unlike black phosphorus p‐FETs, possesses a conductivity that is semimetallic at T < 100 K and a tunable bandgap that covers an absorption spectrum in the mid‐infrared to long‐wavelength infrared regime.