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Physical review. B, 2016-09, Vol.94 (11), Article 115303
2016
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Autor(en) / Beteiligte
Titel
Dynamical calculation of third-harmonic generation in a semiconductor quantum well
Ist Teil von
  • Physical review. B, 2016-09, Vol.94 (11), Article 115303
Erscheinungsjahr
2016
Quelle
American Physical Society
Beschreibungen/Notizen
  • Nonlinear phenomena in optically excited semiconductor structures are of high interest. Here we develop a model capable of studying the dynamics of the photoexcited carriers, including Coulomb interaction on a Hartree-Fock level, on the same footing as the dynamics of the light field impinging on an arbitrary photonic structure. Applying this method to calculate the third-harmonic generation in a semiconductor quantum well embedded in a Bragg mirror structure, we find that the power-law exponent of the intensity dependence of the third-harmonic generation depends on the frequency of the exciting pulse. Off-resonant pulses follow the expected cubic dependence, while the exponent is smaller for resonant pulses due to saturation effects in the induced carrier density. Our study provides a detailed understanding of the carrier and light field dynamics during nonlinear processes.
Sprache
Englisch
Identifikatoren
ISSN: 2469-9950
eISSN: 2469-9969
DOI: 10.1103/PhysRevB.94.115303
Titel-ID: cdi_proquest_miscellaneous_1884117019

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