Details

Autor(en) / Beteiligte

• Mousley, P. J.
• Burrows, C. W.
• Ashwin, M. J.
• Takahasi, M.
• Sasaki, T.
• Bell, G. R.

Titel

In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures

Ist Teil von

• Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

Erscheinungsjahr

2017

Quelle

Wiley Online Library

Beschreibungen/Notizen

• We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray diffraction and reflection high energy electron diffraction. We show data on strain relaxation and growth mode, and discuss the epitaxial relationship between GaAs(001) and MnSb(11‾01). Schematic of the molecular beam epitaxy/X‐ray diffraction in situ experiment and typical 2D detector data, with GaAs(111) and MnSb(0001) diffraction features.