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Damage accumulation and recovery in C+-irradiated Ti3SiC2
Ist Teil von
Acta materialia, 2014-03, Vol.66, p.317-325
Ort / Verlag
Kidlington: Elsevier Ltd
Erscheinungsjahr
2014
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The radiation damage response of Ti3SiC2 irradiated by 700keV C ions has been investigated over a range of fluences and sample temperatures. The samples were analysed using a series of experimental techniques, including glancing-incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy and scanning electron microscopy. This material exhibits a high level of tolerance to damage, especially at high temperature. Irradiation at temperatures from room temperature to 270°C results in decomposition to TiC; however, this is not observed at temperatures above 270°C. A minimum in the observed damage level is evident for irradiation at a sample temperature of 350°C. At higher temperatures the damage level increases, and results in material which is made up of damaged Ti3SiC2.