Details

Autor(en) / Beteiligte

• Oehme, Michael
• Kostecki, Konrad
• Schmid, Marc
• Oliveira, Filipe
• Kasper, Erich
• Schulze, Jörg

Titel

Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

Ist Teil von

• Thin solid films, 2014-04, Vol.557, p.169-172

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Elsevier ScienceDirect Journals Complete

Beschreibungen/Notizen

• Strained and unstrained GeSn layers on Si substrates were grown with Sn contents up to 20% and 25%, respectively. All metastable layer structures were fabricated by means of an ultra-low temperature molecular beam epitaxy process. The useful thickness of the metastable layers for a range of Sn contents, growth temperatures and two different strain values (unstrained, compressive strained) is explored. The epitaxial breakdown thickness which limits the useful thickness range decreases exponentially with increasing growth temperature and Sn concentration. •GeSn epitaxy•GeSn layers with Sn contents up to 25%•Limited layer thickness