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Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer
Ist Teil von
ACS nano, 2017-04, Vol.11 (4), p.4097-4104
Ort / Verlag
American Chemical Society
Erscheinungsjahr
2017
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly observe the switching dynamics of Cu tip/SiO2/W cells with various active electrode sizes using in situ transmission electron microscopy. Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert electrode (W) during the SET operations. The size of the Cu tip affects the electric-field distribution, the amount of the cation injection into electrolyte, and the dimension of the CF. This study provides helpful understanding on the relationship between power consumption and retention of CBRAM cells. We also construct a theoretical model to explain the electrode-size-dependent CF growth in SET operations, showing good agreement with our experimental results.
Sprache
Englisch
Identifikatoren
ISSN: 1936-0851
eISSN: 1936-086X
DOI: 10.1021/acsnano.7b00783
Titel-ID: cdi_proquest_miscellaneous_1879660811
Format
–
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