Details

Autor(en) / Beteiligte

• Tangi, Malleswararao
• Mishra, Pawan
• Tseng, Chien-Chih
• Ng, Tien Khee
• Hedhili, Mohamed Nejib
• Anjum, Dalaver H
• Alias, Mohd Sharizal
• Wei, Nini
• Li, Lain-Jong
• Ooi, Boon S

Titel

Band Alignment at GaN/Single-Layer WSe2 Interface

Ist Teil von

• ACS applied materials & interfaces, 2017-03, Vol.9 (10), p.9110-9117

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.