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Alternative approaches to electronic damage by ion-beam irradiation: Exciton models
Ist Teil von
Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.2960-2968
Ort / Verlag
Weinheim: Blackwell Publishing Ltd
Erscheinungsjahr
2016
Link zum Volltext
Quelle
Wiley Online Library All Journals
Beschreibungen/Notizen
The paper briefly describes the main features of the damage produced by swift heavy ion (SHI) irradiation. After a short revision of the widely used thermal spike concept, it focuses on cumulative mechanisms of track formation which are alternative to those based on lattice melting (thermal spike models). These cumulative mechanisms rely on the production of point defects around the ion trajectory, and their accumulation up to a final lattice collapse or amorphization. As to the formation of point defects, the paper considers those mechanisms relying on direct local conversion of the excitation energy into atomic displacements (exciton models). A particular attention is given to processes based on the non‐radiative recombination of excitons that have become self‐trapped as a consequence of a strong electron–phonon interaction (STEs). These mechanisms, although operative under purely ionizing radiation in some dielectric materials, have been rarely invoked, so far, to discuss SHI damage. They are discussed in this paper together with relevant examples to materials such as Cu3N, alkali halides, SiO2, and LiNbO3.
The mechanisms of structural damage induced by heavy ions with energies around and above 1 MeV are, still, controversial. The basic question is how the high excitation energy deposited by the projectile on the electronic system is transferred to the crystal lattice, breaks atomic bonds and causes amorphization. Here, the authors present an up‐to‐date description of models based on the formation, self‐trapping and recombination of bound electron‐hole pairs (excitons).