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dependence of Raman defect bands in silica glasses on densification revisited
Ist Teil von
Journal of materials science, 2016-02, Vol.51 (3), p.1659-1666
Ort / Verlag
New York: Springer US
Erscheinungsjahr
2016
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
This paper focuses on the densification signature measured by Raman spectroscopy in silica-based glasses. We have studied a pure silica glass and a 25GeO₂–75SiO₂ binary glass fabricated by plasma chemical vapor deposition (PCVD), using the fictive temperature T f as a variable parameter ranging from 950 to 1400 °C. Macroscopic density measurements highlighted two opposite behaviors: the higher the fictive temperature, the lower the density of the GeO₂–SiO₂ glass, in contrast to what is observed in the pure silica glass. Yet, Raman spectra of both these glasses showed similar trends: the intensities of the two defect bands, D₁ and D₂, increase with increasing fictive temperature. Therefore, the D₁ and D₂ bands cannot be used as a reliable signature of densification in binary glasses.