Details

Autor(en) / Beteiligte

• Li, Guanghui
• Liu, Lin
• Wu, Guan
• Chen, Wei
• Qin, Sujie
• Wang, Yi
• Zhang, Ting

Titel

Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction

Ist Teil von

• Small (Weinheim an der Bergstrasse, Germany), 2016-09, Vol.12 (36), p.5019-5026

Ort / Verlag

Germany: Blackwell Publishing Ltd

Erscheinungsjahr

2016

Quelle

Access via Wiley Online Library

Beschreibungen/Notizen

• A novel self‐powered photodetector based on reduced graphene oxide (rGO)/n‐Si p‐n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p‐n vertical heterojunction between a drop‐casted rGO thin film and n‐Si. Contacts between the semiconductor layer (rGO, n‐Si) and source–drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self‐powered UV–near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm−2), the device has a photoresponsivity of 1.52 A W−1, with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 104 when the power density reaches ≈2.5 mW cm−2. The high photoresponse primarily arises from the built‐in electric field formed at the interface of n‐Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n‐Si effective contact area on device performance are also systematically investigated. A self‐powered photodetector based on rGO/n‐Si p‐n vertical heterojunction is successfully fabricated, which shows fast response and high photoresponsivity to UV–near infrared light. Under the 600 nm illumination, the photoresponsivity of the device achieves 1.52 A W−1 without applied bias voltage.