Details

Autor(en) / Beteiligte

• Kern, Johannes
• Niehues, Iris
• Tonndorf, Philipp
• Schmidt, Robert
• Wigger, Daniel
• Schneider, Robert
• Stiehm, Torsten
• Michaelis de Vasconcellos, Steffen
• Reiter, Doris E.
• Kuhn, Tilmann
• Bratschitsch, Rudolf

Titel

Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2

Ist Teil von

• Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7101-7105

Ort / Verlag

Germany: Blackwell Publishing Ltd

Erscheinungsjahr

2016

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• Single‐photon emitters in monolayer WSe2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single‐photon emitters are localized there with a precision better than 140 nm.