Details

Autor(en) / Beteiligte

• Gao, Feng
• Luo, Shuai
• Ji, Hai-Ming
• Liu, Song-Tao
• Lu, Dan
• Ji, Chen
• Yang, Tao

Titel

Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

Ist Teil von

• Optics communications, 2016-07, Vol.370, p.18-21

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report on ultra-short pulse single-section mode-locked lasers emitting at 1.55μm, based on self-assembled InAs/InGaAsP/InP quantum dot active regions grown by metal-organic vapor phase epitaxy (MOVPE). For a 1.5-mm-long Fabry-Perot laser, mode-locking at a repetition rate of 29.8GHz with pulse duration of 855fs is obtained without any external pulse compression techniques. The mode-beating exhibits a narrow RF linewidth less than 30kHz, and a wide frequency tuning range up to 73MHz can be achieved by simply changing the injection current. Moreover, a higher repetition rate of 55.6GHz and the transform limited Gaussian-pulse with the 707fs pulse duration are achieved from a device with a shorter cavity length of 0.8mm. •Single-section InAs/InP QD mode-locked laser grown by MOVPE are experimentally studied for the first time.•A wide frequency tuning range up to 73MHz and a RF spectral width less than 30kHz is achieved.•For a 0.8-mm-long device, transform limited Gaussian-pulse with the pulse duration of 707fs is achieved.