Details

Autor(en) / Beteiligte

• Du, B.
• Gu, Y.
• Zhang, Y.G.
• Chen, X.Y.
• Xi, S.P.
• Ma, Y.J.
• Ji, W.Y.
• Shi, Y.H.
• Li, X.
• Gong, H.M.

Titel

Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

Ist Teil von

• Journal of crystal growth, 2016-04, Vol.440, p.1-5

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• High In content In0.83Ga0.17As photodetector structures with a new kind of buffer scheme have been grown on InP substrate by gas source molecular beam epitaxy. The effects of buffer scheme on material properties and device performances have been investigated both experimentally and theoretically. The structures with the combination of step and continuously graded buffers show reduced surface roughness, improved photoluminescence intensity and lower device dark current than those with simplex continuously graded buffer at the same buffer thickness. The mechanisms have been discussed from X-ray diffraction, photoluminescence, dark current measurements and model analysis. •The buffer scheme in InP-based high indium InGaAs detector was investigated.•A new step-continuously graded buffer was developed.•The material quality and device performance were both improved.•The physical mechanism was discussed theoretically.