Details

Autor(en) / Beteiligte

• Kostka, Petr
• Zavadil, Jiří
• Iovu, Mihail S.
• Ivanova, Zoya G.
• Furniss, David
• Seddon, Angela B.

Titel

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Ist Teil von

• Journal of alloys and compounds, 2015-11, Vol.648, p.237-243

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2015

Quelle

ScienceDirect

Beschreibungen/Notizen

• Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE3+) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE3+ ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE3+ ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE3+ dopants. •An evidence of energy transfer from host-glass to doped-in RE ions is presented.•Energy transfer is manifested by dips in host-glass broad-band luminescence.•This channel of energy transfer is documented on selected RE doped sulfide glasses.•Photoluminescence spectra are dominated by broad band host-glass luminescence.•Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.