Details

Autor(en) / Beteiligte

• Qiu, Yu Feng
• Qu, Xiao Lei
• Shi, Wei Min
• Zhou, Ping Sheng
• Dai, Wen Yun
• Jin, Jing
• Huang, Lu

Titel

Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

Ist Teil von

• Advanced Materials Research, 2013-01, Vol.652-654, p.1765-1768

Ort / Verlag

Trans Tech Publications Ltd

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A viscous Nickel (Ni) solution was applied on amorphous Si films by spin coating and its effect on the crystallization of amorphous Si films was investigated with a two-step annealing process. The experimental results show that with the help of the two-step annealing, the crystallization of the film can take place at 500oC. At the same time, the crystalline fraction gets up to 79.4% after annealing at a high temperature of 520oC and the grain size of the polycrystalline Si films is approximately 200 nm.