Details

Autor(en) / Beteiligte

• Lekshmy, S Sujatha
• Berlin, I John
• Maneeshya, L V
• Anitha
• Joy, K

Titel

Structural and optical characterisation of tin dioxide thin films by sol-gel dip coating technique

Ist Teil von

• IOP conference series. Materials Science and Engineering, 2015-01, Vol.73 (1), p.12018

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2015

Link zum Volltext

Quelle

EZB*

Beschreibungen/Notizen

• Tin oxide (SnO2) thin films were deposited on quartz substrates using sol-gel dip coating technique. X-ray diffraction (XRD) pattern indicated that the film annealed in air at 350°C was amorphous in nature, whereas, the films annealed in oxygen atmosphere at 350°C showed crystalline phase. The films were further annealed in oxygen atmosphere at 450°C and 550°C. All the diffraction peaks can be indexed to the tetragonal phase of SnO2 The surface morphology (SEM) showed that surface of all films were continuous and without micro cracks. The Energy dispersive X-ray spectroscopy (EDXS) spectra indicated an increase in the concentration of oxygen content with increase in annealing temperature. The energy band gap value for the film annealed in air was 3.88 eV. The optical band gap increased to 4.05 eV when annealed in O2 atmosphere. The photoluminescence (PL) spectra showed the presence of emission peaks in UV region and visible region of the electromagnetic spectra. Transparent oxide semiconductor SnO2 film finds potential application as an active channel layer for transparent thin film transistor.