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Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures
Ist Teil von
Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1155-1162
Ort / Verlag
Blackwell Publishing Ltd
Erscheinungsjahr
2015
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We have considered the structural properties of InGaN thin interlayers with thicknesses from 1 up to 40 nm, grown by plasma assisted molecular beam epitaxy (PAMBE) at substrate temperatures ∼500 °C. Quantitative high resolution transmission electron microscopy (HRTEM) techniques were employed for the study of the structural characteristics and strain relaxation. Based on nanoscale strain measurements, it was determined that the indium content of the layers increased with increasing thickness under identical growth conditions. Layer thickness was larger than nominal up to the onset of strain relaxation. This behavior, as well as the roughening of the upper interface of the layers, was attributed to indium segregation. After the onset of plastic strain relaxation, indium incorporation increases at a slower rate with thickness. A multi‐quantum well (MQW) heterostructure deposited at low temperature exhibited roughening of the InGaN layers and indium accumulation at troughs, concurrent with low defect content, resulting in improved carrier localization.