Details

Autor(en) / Beteiligte

• Galy, Ph
• Athanasiou, S.
• Cristoloveanu, S.

Titel

New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode

Ist Teil von

• 2015 International Semiconductor Conference (CAS), 2015, p.157-160

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.