Details

Autor(en) / Beteiligte

• Guo, Ning
• Wei, Jinquan
• Jia, Yi
• Sun, Huanhuan
• Wang, Yuhang
• Zhao, Kehan
• Shi, Xiaolan
• Zhang, Liuwan
• Li, Xinming
• Cao, Anyuan
• Zhu, Hongwei
• Wang, Kunlin
• Wu, Dehai

Titel

Fabrication of large area hexagonal boron nitride thin films for bendable capacitors

Ist Teil von

• Nano research, 2013-08, Vol.6 (8), p.602-610

Ort / Verlag

Berlin/Heidelberg: Springer Berlin Heidelberg

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.