Details

Autor(en) / Beteiligte

• Olshanetsky, E B
• Kvon, Z D
• Gusev, G M
• Levin, A D
• Raichev, O E
• Mikhailov, N N
• Dvoretsky, S A

Titel

Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells

Ist Teil von

• Physical review letters, 2015-03, Vol.114 (12), p.126802-126802, Article 126802

Ort / Verlag

United States

Erscheinungsjahr

2015

Quelle

PROLA

Beschreibungen/Notizen

• Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10  μm a quasiballistic transport via the edge states is observed.