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Synthesis and characterization of Ce-incorporated CuInS2 chalcopyrites
Ist Teil von
Materials letters, 2015-11, Vol.159, p.392-394
Erscheinungsjahr
2015
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
CuInS2 thin films incorporating with cerium have been successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn1-x Ce x S2 samples crystallize with chalcopyrite structure at 250 degree C and the crystallinity and film compactness could be improved as annealing temperature rises. In the ultraviolet-visible-near infrared spectrum, two additional light absorption peaks were observed at 1690nm and 1930nm. The optical bandgaps of CuIn1-x Ce x S2 films decrease from 1.38eV to 1.34eV with increasing cerium content. These observed optical behaviors could suggest that an intermediate band forms in the forbidden band of CuInS2 semiconductor due to cerium incorporation. The position of intermediate band locates at 0.64eV below conduction-band bottom. This kind of rare-earth doped materials enhances long-wavelength absorption, which could be helpful for high-efficiency solar cells.