Details

Autor(en) / Beteiligte

• Kim, Yeomyung
• Choi, Woojun
• Kim, Jaehoon
• Lee, Sanghoon
• Lee, Sangho
• Kim, Hyeongon
• Makinwa, Kofi AA
• Chae, Youngcheol
• Kim, Tae Wook

Titel

A 0.02mm super(2) embedded temperature sensor with plus or minus 2 degree C inaccuracy for self-refresh control in 25nm mobile DRAM

Ist Teil von

• Proceedings of ESSCIRC, 2015-09, p.267-270

Erscheinungsjahr

2015

Link zum Volltext

Quelle

IEL

Beschreibungen/Notizen

• This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm super(2), and achieves 0.04 degree C resolution and plus or minus 2 degree C accuracy from 20 degree C to 95 degree C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK super(2). When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20 degree C to 95 degree C range.