Details

Autor(en) / Beteiligte

• Huang, Liang
• Jing, You-Liang
• Liu, Xi-Hui
• Li, Qian
• Chen, Ping-Ping
• Li, Zhi-Feng

Titel

Far-infrared reflectance spectra and photoelectric characteristics of InN(0.01)Sb(0.99) thin films and the annealing effects

Ist Teil von

• Hong wai yu hao mi bo xue bao, 2015-08, Vol.34 (4), p.437-441

Erscheinungsjahr

2015

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• The far-infrared reflectance spectra and the infrared detection characteristics of the new infrared material of InN(0.01)Sb(0.99) thin films were reported. Far-infrared reflectance spectra, blackbody photoresponses and photocurrent spectra of the lattice mismatched InN(0.01)Sb(0.99) film on GaAs substrate have been measured. A prototype wide-band infrared detector whose response peak at 4.4 (mu)m and cut-off wavelength at 5.7 (mu)m with the FWHM of 3.5 (mu)m has been obtained. By investigating the annealing effects on the device performance, it is found that the crystal quality and the response capability are improved and the Moss-Burstein effect is reduced after annealing.