Details

Autor(en) / Beteiligte

• Liu, Xiao-Yu
• Li, Ying-Ai
• Liu, Shi
• Wu, Hong-Lin
• Cui, Hai-Ning

Titel

ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties

Ist Teil von

• Thin solid films, 2012-06, Vol.520 (16), p.5372-5377

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O2/Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70nm and those of Cu were between 8 and 37nm. The O2/Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O2/Ar ratio of 1:4 and a thickness of ZnO (60nm)/Cu (15nm)/ZnO (60nm). ► ZnO/Cu/ZnO films were fabricated from zinc and copper targets by sputtering. ► Transmittance reaches maximum when top and bottom ZnO thicknesses are nearly equal. ► Sheet resistance increases with increasing ZnO layer thickness. ► Variation in sheet resistance with oxygen/argon ratio is due to interface effect.