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Effect of additional silicon on titanium/4H-SiC contacts properties
Ist Teil von
Chinese physics B, 2014-05, Vol.23 (5), p.516-520
Erscheinungsjahr
2014
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The Ti electrode was deposited on the (0001) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.