Details

Autor(en) / Beteiligte

• 燕少安 唐明华 赵雯 郭红霞 张万里 徐新宇 王旭东 丁浩 陈建伟 李正 周益春

Titel

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

Ist Teil von

• Chinese physics B, 2014-04, Vol.23 (4), p.433-437

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.