Details

Autor(en) / Beteiligte

• Shahrjerdi, Davood
• Franklin, Aaron D
• Oida, Satoshi
• Ott, John A
• Tulevski, George S
• Haensch, Wilfried

Titel

High-Performance Air-Stable n‑Type Carbon Nanotube Transistors with Erbium Contacts

Ist Teil von

• ACS nano, 2013-09, Vol.7 (9), p.8303-8308

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metalserbium, lanthanum, and yttriumare studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation.