Nano letters, 2012-09, Vol.12 (9), p.4600-4604
2012
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Details
- Autor(en) / Beteiligte
- Titel
- Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires
- Ist Teil von
- Nano letters, 2012-09, Vol.12 (9), p.4600-4604
- Ort / Verlag
- Washington, DC: American Chemical Society
- Erscheinungsjahr
- 2012
- Quelle
- MEDLINE
- Beschreibungen/Notizen
- The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm2/(V s)). This is due to the weak influence of surface traps with respect to other III–V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1530-6984eISSN: 1530-6992DOI: 10.1021/nl301898mTitel-ID: cdi_proquest_miscellaneous_1762050736
- Format
- –
- Schlagworte
- Catalytic methods, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Cross-disciplinary physics: materials science, rheology, Crystal structure, Crystallography, Electric Conductivity, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport in multilayers, nanoscale materials and structures, Exact sciences and technology, Gallium - chemistry, Gallium nitrides, Materials science, Materials Testing - methods, Methods of nanofabrication, Molecular beam epitaxy, Molecular structure, Nanocrystalline materials, Nanoscale materials and structures: fabrication and characterization, Nanostructure, Nanotubes - chemistry, Nanotubes - ultrastructure, Nanowires, Optoelectronics, Particle Size, Photoconductivity, Physics, Quantum wires, Static Electricity