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Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
Ist Teil von
Nano letters, 2013-02, Vol.13 (2), p.643-650
Ort / Verlag
Washington, DC: American Chemical Society
Erscheinungsjahr
2013
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We report a novel phase separation phenomenon observed in the growth of ternary In x Ga1‑x As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core–shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In x Ga1‑x As nanowires high precursor flow rates generate ternary In x Ga1‑x As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In x Ga1‑x As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.