Details

Autor(en) / Beteiligte

• Zhang, Shengli
• Xie, Meiqiu
• Li, Fengyu
• Yan, Zhong
• Li, Yafei
• Kan, Erjun
• Liu, Wei
• Chen, Zhongfang
• Zeng, Haibo

Titel

Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

Ist Teil von

• Angewandte Chemie (International ed.), 2016-01, Vol.55 (5), p.1666-1669

Ort / Verlag

Germany: Blackwell Publishing Ltd

Erscheinungsjahr

2016

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm2 V−1 s−1. Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics. The attractive broad range of band gaps and high mobilities of a 2D semiconductor family, namely phosphorene, arsenene, antimonene, and bismuthene, is presented. These Group 15 monolayers have significantly varied energy band gaps, which are crucial for broadband photoresponse. More importantly, puckered phosphorene, arsenene, and buckled bismuthene possess carrier mobilities as high as several thousand cm2 V−1 s−1.