Details

Autor(en) / Beteiligte

• 王俊 胡海洋 邓灿 贺云瑞 王琦 段晓峰 黄永清 任晓敏

Titel

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Ist Teil von

• Chinese physics B, 2015-02, Vol.24 (2), p.449-452

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots（QDs） as dislocation filters by metalorganic chemical vapor deposition（MOCVD） is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10^7 cm^-2 in the GaAs/Si sample without QDs,a density of 2×10^6 cm^-2 is achieved in the sample with QD dislocation filters.