Details

Autor(en) / Beteiligte

• Sun, Yun-Bin
• Zhang, Xiang-Qun
• Li, Guo-Ke
• Cheng, Zhao-Hua

Titel

Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO sub(2) dilute magnetic semiconductors

Ist Teil von

• Chinese physics B, 2012-01, Vol.21 (4), p.047503-1-047503-8

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• According to density functional theory (DFT) using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy (V sub(O)) in a (Ti,Co)O sub(6) distorted octahedron on the spin density and magnetic properties of Co-doped rutile TiO sub(2) dilute magnetic semiconductors. Our calculations suggest that the V sub(O) location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the V sub(O) is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d super(6)(t super(3) sub(2g) [arrowup], t super(3) sub(2g) [arrowdown]) without any magnetic moment. However, if the V sub(O) is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of V sub(O). Some positive spin polarization is induced around the adjacent O ions.