Chinese physics letters, 2013, Vol.30 (6), p.068101-1-068101-3
2013
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- Autor(en) / Beteiligte
- Titel
- InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition
- Ist Teil von
- Chinese physics letters, 2013, Vol.30 (6), p.068101-1-068101-3
- Erscheinungsjahr
- 2013
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs. Ridge waveguide lasers with 6 cm width have been fabricated by standard optical lithography and wet etching. Under continuous wave operation at room temperature, a low threshold current density of 447 A/cm super(2)per QD layer is achieved for a QD laser with a cavity length of 2 mm. Moreover, the lasing redshifts from 1.61 mu m to 1.645 mu m as the cavity length increases from 1.5mm to 4 mm. A high characteristic temperature of up to 88K is obtained in the temperature range between 10[degrees]C and 40[degrees]C
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0256-307XeISSN: 1741-3540DOI: 10.1088/0256-307X/30/6/068101Titel-ID: cdi_proquest_miscellaneous_1753498342
- Format
- –
- Schlagworte
- Density, Holes, Indium arsenides, Indium phosphides, Lasers, Lasing, Metalorganic chemical vapor deposition, Quantum dots, Threshold currents