Details

Autor(en) / Beteiligte

• Luo, C. W
• Wang, H. J
• Ku, S. A
• Chen, H.-J
• Yeh, T. T
• Lin, J.-Y
• Wu, K. H
• Juang, J. Y
• Young, B. L
• Kobayashi, T
• Cheng, C.-M
• Chen, C.-H
• Tsuei, K.-D
• Sankar, R
• Chou, F. C
• Kokh, K. A
• Tereshchenko, O. E
• Chulkov, E. V
• Andreev, Yu. M
• Gu, G. D

Titel

Snapshots of Dirac Fermions near the Dirac Point in Topological Insulators

Ist Teil von

• Nano letters, 2013-12, Vol.13 (12), p.5797-5802

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2013

Link zum Volltext

Quelle

MEDLINE

Beschreibungen/Notizen

• The recent focus on topological insulators is due to the scientific interest in the new state of quantum matter as well as the technology potential for a new generation of THz optoelectronics, spintronics and quantum computations. It is important to elucidate the dynamics of the Dirac fermions in the topologically protected surface state. Hence we utilized a novel ultrafast optical pump mid-infrared probe to explore the dynamics of Dirac fermions near the Dirac point. The femtosecond snapshots of the relaxation process were revealed by the ultrafast optics. Specifically, the Dirac fermion-phonon coupling strength in the Dirac cone was found to increase from 0.08 to 0.19 while Dirac fermions were away from the Dirac point into higher energy states. Further, the energy-resolved transient reflectivity spectra disclosed the energy loss rate of Dirac fermions at room temperature was about 1 meV/ps. These results are crucial to the design of Dirac fermion devices.