Details

Autor(en) / Beteiligte

• Wang, Xi
• Weng, Qunhong
• Liu, Xizheng
• Wang, Xuebin
• Tang, Dai-Ming
• Tian, Wei
• Zhang, Chao
• Yi, Wei
• Liu, Dequan
• Bando, Yoshio
• Golberg, Dmitri

Titel

Atomistic Origins of High Rate Capability and Capacity of N‑Doped Graphene for Lithium Storage

Ist Teil von

• Nano letters, 2014-03, Vol.14 (3), p.1164-1171

Ort / Verlag

Washington, DC: American Chemical Society

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Distinct from pure graphene, N-doped graphene (GN) has been found to possess high rate capability and capacity for lithium storage. However, there has still been a lack of direct experimental evidence and fundamental understanding of the storage mechanisms at the atomic scale, which may shed a new light on the reasons of the ultrafast lithium storage property and high capacity for GN. Here we report on the atomistic insights of the GN energy storage as revealed by in situ transmission electron microscopy (TEM). The lithiation process on edges and basal planes is directly visualized, the pyrrolic N “hole” defect and the perturbed solid-electrolyte-interface configurations are observed, and charge transfer states for three N-existing forms are also investigated. In situ high-resolution TEM experiments together with theoretical calculations provide a solid evidence that enlarged edge {0002} spacings and surface hole defects result in improved surface capacitive effects and thus high rate capability and the high capacity are owing to short-distance orderings at the edges during discharging and numerous surface defects; the phenomena cannot be understood previously by standard electron or X-ray diffraction analyses.