Details

Autor(en) / Beteiligte

• Li, Jia
• Yu, Cui
• Wang, Li
• Liu, Qingbin
• He, Zezhao
• Cai, Shujun
• Feng, Zhihong

Titel

Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

Ist Teil von

• Journal of semiconductors, 2014-07, Vol.35 (7), p.74006-1-074006-5

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A scalable self-aligned approach is employed to fabricate monolayer graphene field-effect transistors on semi-insulated 4H-SiC (0001) substrates. The self-aligned process minimized access resistance and parasitic capacitance. Self-oxidized Al sub(2)O sub(3), formed by deposition of 2 nm Al followed by exposure in air to be oxidized, is used as gate dielectric and shows excellent insulation. An intrinsic cutoff frequency of 34 GHz and maximum oscillation frequency of 36.4 GHz are realized for the monolayer graphene field-effect transistor with a gate length of 0.2 mu m. These studies show a pathway to fabricate graphene transistors for future applications in ultra-high frequency circuits.