Details

Autor(en) / Beteiligte

• Ogawa, M.
• Yamamoto, S.
• Fujikawa, K.
• Hobara, R.
• Yukawa, R.
• Yamamoto, Sh
• Kitagawa, S.
• Pierucci, D.
• Silly, M. G.
• Lin, C.-H.
• Liu, R.-Y.
• Daimon, H.
• Sirotti, F.
• Tang, S.-J.
• Matsuda, I.

Titel

Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy

Ist Teil von

• Physical review. B, Condensed matter and materials physics, 2013-10, Vol.88 (16), Article 165313

Erscheinungsjahr

2013

Quelle

PROLA - Physical Review Online Archive

Beschreibungen/Notizen

• We have systematically investigated relaxation of the surface photovoltage effect on the atomically controlled In/Si(111) surfaces with distinctive surface states and different amounts of the surface band bending. The temporal variations were traced in real time by time-resolved photoemission spectroscopy using soft x-ray synchrotron radiation. The relaxation is found to be temporally limited by two steps of the carrier transfer from the bulk to the surface: the tunneling process at a delay time < or = 100 ns and the thermionic process on the following time scale (> or = 100 ns). Crossover of the two mechanisms can be understood by breakdown of the quantum tunneling regime by the increase in width of the space-charge layer during the relaxation.