Details

Autor(en) / Beteiligte

• Kessler, C. A.
• Reischle, M.
• Hargart, F.
• Schulz, W.-M.
• Eichfelder, M.
• Roßbach, R.
• Jetter, M.
• Michler, P.
• Gartner, P.
• Florian, M.
• Gies, C.
• Jahnke, F.

Titel

Strong antibunching from electrically driven devices with long pulses: A regime for quantum-dot single-photon generation

Ist Teil von

• Physical review. B, Condensed matter and materials physics, 2012-09, Vol.86 (11), Article 115326

Erscheinungsjahr

2012

Quelle

PROLA

Beschreibungen/Notizen

• We present excitation-pulse-width- and pump-power-dependent microelectroluminescence and photon statistics measurements on electrically driven single-photon devices based on InP/AlGalnP quantum dots (QDs). For an excitation regime far below QD saturation, the results show a characteristic decrease of the purity of the single-photon emission [g super((2)) (0) value] with increasing excitation pulse width. For stronger excitation pulses close to QD saturation, strong antibunching is maintained for a much larger pulse width. In this case the ground-state exciton emission, which is used for the single-photon source, is inhibited during the pump pulse due to the presence of higher excited states. This prevents multiple-ground-state emission and reexcitation during long pump pulses and delays the single-photon emission to the end of the pulse, as predicted by theory and confirmed experimentally.