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A scheme for spin-selective electron localization in Mn sub(3)Ga Heusler material
Ist Teil von
Journal of physics. D, Applied physics, 2015-04, Vol.48 (16), p.1-6
Erscheinungsjahr
2015
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We demonstrate that tetragonal Mn sub(3)Ga Heusler material allows for a new possibility of adjusting an electric current by means of the so-called spin-selective localization of conduction electrons. On the basis of a first-principles analysis, we propose possible chemical substitutes for Mn, which, when used in small quantities, can lead to a disorder-induced localization of the conduction electrons in a single spin channel. Replacement of the Mn in Mn sub(3-x)Y sub(x)Ga with other 3d transition metals Y is known not to change the tetragonal structure for a certain range of x. For Y = Co the range is x [< or =, slanted] 0.5. Therefore, substitution of Co for Mn is used in the present work as a prototype procedure for a detailed demonstration of the underlying physical mechanisms.