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High-Performance Hole-Extraction Layer of Sol-Gel-Processed NiO Nanocrystals for Inverted Planar Perovskite Solar Cells
Ist Teil von
Angewandte Chemie (International ed.), 2014-11, Vol.53 (46), p.12571-12575
Auflage
International ed. in English
Ort / Verlag
Weinheim: WILEY-VCH Verlag
Erscheinungsjahr
2014
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Hybrid organic/inorganic perovskite solar cells have been rapidly evolving with spectacular successes in both nanostructured and thin‐film versions. Herein, we report the use of a simple sol–gel‐processed NiO nanocrystal (NC) layer as the hole‐transport layer in an inverted perovskite solar cell. The thin NiO NC film with a faceted and corrugated surface enabled the formation of a continuous and compact layer of well‐crystallized CH3NH3PbI3 in a two‐step solution process. The hole‐extraction and ‐transport capabilities of this film interfaced with the CH3NH3PbI3 film were higher than those of organic PEDOT:PSS layers. The cell with a NiO NC film with a thickness of 30–40 nm exhibited the best performance, as a thinner layer led to a higher leakage current, whereas a thicker layer resulted in a higher series resistance. With the NiO film, we observed a cell efficiency of 9.11 %, which is by far the highest reported for planar perovskite solar cells based on an inorganic hole‐extracting layer.
The advantages are crystal clear: A transparent layer of NiO nanocrystals fabricated by a simple sol–gel processing method acted as an efficient hole‐transport layer in an inverted perovskite solar cell. With the NiO film (see picture), a cell efficiency of 9.11 % was observed: by far the highest for a planar perovskite solar cell based on an inorganic hole‐extraction layer.