Details

Autor(en) / Beteiligte

• Endo, Toshiyuki
• Nagase, Takashi
• Kobayashi, Takashi
• Naito, Hiroyoshi

Titel

Highly Oriented Polymer Field-Effect Transistors with High Electrical Stability

Ist Teil von

• Japanese Journal of Applied Physics, 2013-12, Vol.52 (12), p.121601-121601-4

Ort / Verlag

The Japan Society of Applied Physics

Erscheinungsjahr

2013

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Oriented polymer field-effect transistors (FETs) with a top-gate configuration have been fabricated using amorphous fluoropolymers as gate insulators. The oriented poly(9,9-dioctylfluorene- co -bithiophene) (F8T2) FETs exhibit a high mobility anisotropy of 13 and a high mobility of 0.043 cm 2 $\cdot$V -1 $\cdot$s -1 for charge transport parallel to the alignment direction. The temperature dependence of the mobility reveals small disorder in the oriented F8T2 microstructure at the interface with the fluoropolymer gate insulator. The transfer characteristics show no hysteresis or threshold voltage shift after applying a gate bias stress.