Details

Autor(en) / Beteiligte

• Yasui, Manabu
• Kazawa, Elito
• Kaneko, Satoru
• Takahashi, Ryo
• Kurouchi, Masahito
• Ozawa, Takeshi
• Arai, Masahiro

Titel

Effects of post exposure bake temperature and exposure time on SU-8 nanopattern obtained by electron beam lithography

Ist Teil von

• Japanese Journal of Applied Physics, 2014-11, Vol.53 (11S), p.11-1-11RF03-3

Ort / Verlag

The Japan Society of Applied Physics

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• SU-8 is a photoresist imaged using UV rays. However, we investigated the characteristics of an SU-8 nanopattern obtained by electron beam lithography (EBL). In particular, we studied the relationship between post-exposure bake (PEB) temperature and exposure time on an SU-8 nanopattern with a focus on phase transition temperature. SU-8 residue was formed by increasing both PEB temperature and exposure time. To prevent the formation of this, Monte Carlo simulation was performed; the results of such simulation showed that decreasing the thickness of SU-8 can reduce the amount of residue from the SU-8 nanopattern. We confirmed that decreasing the thickness of SU-8 can also prevent the formation of residue from the SU-8 nanopattern with EBL.