Details

Autor(en) / Beteiligte

• Shinde, S.S.
• Shinde, P.S.
• Oh, Y.W.
• Haranath, D.
• Bhosale, C.H.
• Rajpure, K.Y.

Titel

Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

Ist Teil von

• Applied surface science, 2012-10, Vol.258 (24), p.9969-9976

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (002) and (101) planes. Presence of E2high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.