Applied surface science, 2012-10, Vol.258 (24), p.10064-10067
2012
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- Autor(en) / Beteiligte
- Titel
- Annealing effects on properties of Ag–N dual-doped ZnO films
- Ist Teil von
- Applied surface science, 2012-10, Vol.258 (24), p.10064-10067
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2012
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- ► The influence of post-annealing conditions on the properties of p-type ZnO:(Ag,N) films was investigated. ► Transition from n-type to p-type conduction occurred at the annealing temperature of 400°C. ► The hole concentration first increases and then decreases with increasing annealing temperature. The optimum annealing temperature is about 500°C. ► The ZnO:(Ag,N) films exhibit a strong ultraviolet emission after annealing in O2. Ag–N dual-doped p-type ZnO (ZnO:(Ag,N)) thin films have been prepared using the sol–gel method. The modifications of the structural, electrical and optical properties of ZnO:(Ag,N) films after annealing in various atmosphere in the temperature range of 300–600°C are discussed. Results show the oxygen-rich environment is benefit to the p-type samples. Transition from n-type to p-type conduction occurred at the annealing temperature of 400°C. The optimum annealing temperature is about 500°C.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0169-4332eISSN: 1873-5584DOI: 10.1016/j.apsusc.2012.06.075Titel-ID: cdi_proquest_miscellaneous_1685765675
- Format
- –
- Schlagworte
- Annealing, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Dual-doping, Exact sciences and technology, Optical properties, Optimization, Physics, Post-annealing, Silver, Sol gel process, Sol–gel method, Temperature, Thin films, Zinc oxide, ZnO