Journal of crystal growth, 2014-09, Vol.402, p.169-174
2014
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Details
- Autor(en) / Beteiligte
- Titel
- Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application
- Ist Teil von
- Journal of crystal growth, 2014-09, Vol.402, p.169-174
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2014
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- The influence of a rapid thermal annealing procedure on the properties of Ga(N,As,P) multiple quantum wells grown on silicon substrates has been studied. We reveal the changes in composition and disorder on the basis of photoluminescence, photoluminescence excitation and Raman spectroscopy as well as transmission electron microscopy. The optimal annealing temperature was found to be in the range of 900–925°C. By increasing the annealing temperature (Ta) from 850°C to 1000°C, we found a gradual exchange of arsenic and phosphorous atoms between the quantum wells and the barriers. At highest annealing temperatures our results are consistent with a reduction of the As concentration by several percent. •Ga(N,As,P) MQWs on silicon substrates have been studied by optical spectroscopy.•Changes in composition of the quaternary quantum wells have been found.•Exchange of arsenic and phosphorous atoms has been revealed.•The optimal annealing temperature for laser application was determined.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-0248eISSN: 1873-5002DOI: 10.1016/j.jcrysgro.2014.05.012Titel-ID: cdi_proquest_miscellaneous_1678011053
- Format
- –
- Schlagworte
- A1. CMOS compatibility, A1. Diffusion, A1. Optical spectroscopy, A1. TEM, A3. Quantum wells, Annealing, B2. Semiconducting quaternary alloys, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Crystal growth, Diffusion in solids, Disorders, Exact sciences and technology, Laser applications, Materials science, Nanoscale materials and structures: fabrication and characterization, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Optimization, Other topics in nanoscale materials and structures, Photoluminescence, Physics, Quantum wells, Silicon substrates, Transport properties of condensed matter (nonelectronic)