Details

Autor(en) / Beteiligte

• Zhao, Chuan-Zhen
• Wei, Tong
• Sun, Xiao-Dong
• Wang, Sha-Sha
• Lu, Ke-Qing

Titel

Pressure dependence of the band gap energy at [Gamma] and X for the dilute nitride GaNP alloy

Ist Teil von

• Journal of alloys and compounds, 2014-09, Vol.608, p.66-68

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The pressure dependence of the band gap energy at [Gamma] and X for the dilute nitride GaNP alloy is analyzed. It is found that the energy difference between the X conduction band minimum and the [Gamma] conduction band minimum in GaN sub(x)P sub(1-x) increases with increasing N content. It is due to two factors. One is the coupling interaction between the X conduction band minimum of GaP and the N level. The other is the coupling interaction between the [Gamma] conduction band minimum of GaP and the N level. The decrease of the integrated photoluminescence intensity and the sublinear pressure dependence of the band gap energy in the moderate pressure range are due to the redistribution of the carriers in the conduction band.