Details

Autor(en) / Beteiligte

• Mishchenko, A.
• Tu, J. S.
• Cao, Y.
• Gorbachev, R. V.
• Wallbank, J. R.
• Greenaway, M. T.
• Morozov, V. E.
• Morozov, S. V.
• Zhu, M. J.
• Wong, S. L.
• Withers, F.
• Woods, C. R.
• Kim, Y-J.
• Watanabe, K.
• Taniguchi, T.
• Vdovin, E. E.
• Makarovsky, O.
• Fromhold, T. M.
• Fal'ko, V. I.
• Geim, A. K.
• Eaves, L.
• Novoselov, K. S.

Titel

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Ist Teil von

• Nature nanotechnology, 2014-10, Vol.9 (10), p.808-813

Ort / Verlag

London: Nature Publishing Group UK

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Crystallographic alignment of the two graphene layers in a van der Waals heterostructure leads to resonant tunnelling with the conservation of both energy and momentum. Recent developments in the technology of van der Waals heterostructures 1 , 2 made from two-dimensional atomic crystals 3 , 4 have already led to the observation of new physical phenomena, such as the metal–insulator transition 5 and Coulomb drag 6 , and to the realization of functional devices, such as tunnel diodes 7 , 8 , tunnel transistors 9 , 10 and photovoltaic sensors 11 . An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack 12 , but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers 13 , 14 , 15 , 16 , 17 . Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.