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Determination of Relative Sensitivity Factors of Impurities in Poly-Silicon by Derect Current Glow Discharge Mass Spectrometry
Ist Teil von
Fēnxī huàxué, 2012-01, Vol.40 (1), p.66-71
Erscheinungsjahr
2012
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
This paper mainly describes the determination of relative sensitivity factors(RSF) of the key impurities in poly-silicon by direct current glow discharge mass spectrometry (dc-GD-MS). Appropriate content of non-standard poly-silicon samples was molten in furnace under argon atmosphere and cast to ingot. Prior to casting, the B and P key impurities were added to the silicon melt in the range of 1-30 mu g/g. Then a series of standard samples were made for the flat cell analysis (20 mm x 20 mm x 2 mm). The accurate concentrations of the key impurity in these standard samples were determined by secondary ion mass spectrometry(SI-MS) analysis. The key impurities of standard samples were also detected by GD-MS to get the ion intensity and the uncorrected concentration under optimized conditions. The relative sensitivity factors(RSF) of key impurities were calculated by the experimental formula and standard curve method.