Details

Autor(en) / Beteiligte

• Sulmoni, L.
• Lamy, J.-M.
• Dorsaz, J.
• Castiglia, A.
• Carlin, J.-F.
• Scheibenzuber, W. G.
• Schwarz, U. T.
• Zeng, X.
• Boïko, D. L.
• Grandjean, N.

Titel

Static and dynamic properties of multi-section InGaN-based laser diodes

Ist Teil von

• Journal of applied physics, 2012-11, Vol.112 (10)

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias.